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  1SS403 2001-02-07 1/3 toshiba diode silicon epitaxial planar type 1SS403 high voltage switching applications  two-pin small packages are suitable for higher mounting densities.  excellent in forward current and forward voltage characteristics : v f (2) = 0.90v (typ.)  fast reverse recovery time : t rr = 60ns (typ.)  small total capacitance : c t = 1.5pf (typ.) maximum ratings (ta = 25     c) characteristic symbol rating unit maximum (peak) reverse voltage v rm 250 v reverse voltage v r 200 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p 200 ( * ) mw junction temperature t j 125  c storage temperature range t stg ? 55~125  c ( * ) when mounted on a glass epoxy board pcb: 20 mm 20 mm, with copper pad 4 mm 4 mm. electrical characteristics (ta = 25     c) characteristic symbol test circuit test condition min typ. max unit v f (1) D i f = 10ma D 0.72 1.0 forward voltage v f (2) D i f = 100ma D 0.90 1.2 v i r (1) D v r = 50v D D 0.1 reverse current i r (2) D v r = 200v D D 1.0  a total capacitance c t D v r = 0, f = 1mhz D 1.5 3.0 pf reverse recovery time t rr D i f = 10ma (fig. 1) D 10 60 ns jedec D  eiaj D toshiba 1-1e1a weight: 4.5 mg unit in mm tentative  toshiba is continually working to improve the quality and reliability of its products. nevertheless, semiconductor devices in ge neral can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibi lity of the buyer, when utilizing toshiba products, to comply with the standards of safety in making a safe design for the entire system, a nd to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury o r damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handlin g guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc..  the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfun ction o r failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energ y control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion cont rol instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this docume n t shall be made at the customer?s own risk. 000707eaa2
1SS403 2001-02-07 2/3 fig.1 reverse recovery time (t rr ) test circuit equivalent circuit (top view) marking  the information contained herein is presented only as a guide for the applications of our products. no responsibility is assume d b y toshiba corporation for any infringements of intellectual property or other rights of the third parties which may result from i ts use. no license is granted by implication or otherwise under any intellectual property or other rights of toshiba corporation o r others.  the information contained herein is subject to change without notice. 000707eaa2
1SS403 2001-02-07 3/3


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